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Vishay Wins EDN China Innovation Awards for Power Metal Strip(R) Resistors and Third-Generation TrenchFET(R) Power … (Marketwire via Yahoo! Finance)

MALVERN, PA--(Marketwire - 11/18/09) - Vishay Intertechnology, Inc. (NYSE: VSH - News ) today announced that it has won two 2009 EDN China Innovation Awards, respectively, for recently introduced Power Metal Strip resistors and TrenchFET power MOSFETs. In the Passive Component, Connector and Sensor category, Vishay was honored with a Leading Product award for a new high-temperature 1-W surface ...
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