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Vishay Wins EDN China Innovation Awards for Power Metal Strip(R) Resistors and Third-Generation TrenchFET(R) Power … (Marketwire)

MALVERN, PA--(Marketwire - November 18, 2009) - Vishay Intertechnology, Inc. ( NYSE : VSH ) today announced that it has won two 2009 EDN China Innovation Awards, respectively, for recently introduced Power Metal Strip® resistors and TrenchFET® power MOSFETs. In the Passive Component, Connector and Sensor category, Vishay was honored with a Leading Product award for a new high-temperature 1-W ...
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